Fairchild RFD3055 N-Channel Power MOSFET 12A 60V 0.150Ω

Manufactured by Fairchild Semiconductor - TO-252AA SMD Package

DESCRIPTION

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

FEATURES

12A 60V
r_DS(ON) = 0.150Ω
Temperature Compensating PSPICE® Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175°C Operating Temperature