IR IRF6648TR1PBF MOSFET Transistor N-channel 86A 60V 7-Pin DirectFET MN (Pk of 2)

RS Components Part # 688-6721

Supplied in an RS sealed pack of 2
Manufactured by International Rectifier - Part # IRF6648TR1PBF - DirectFET MN 7-Pin Package

DESCRIPTION

The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET™ packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%..

FEATURES

• RoHS Compliant
• Low Profile (<0.7mm)
• Dual Sided Cooling Compatible
• Ultra Low Package Inductance
• Optimized for High Frequency Switching
• Optimized for Synchronous Rectification for 5V to 12V Outputs
• ideal for 24V Input Primary Side Forward Converters
• Low Conduction Losses
• Compatible with Existing Surface Mount Techniques

SPECIFICATIONS

Category: Power MOSFET
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Source, Quad Drain, Single
Dimensions: 5.45 x 5.05 x 0.6mm
Maximum Continuous Drain Current: 86 A
Maximum Drain Source Resistance: 0.007 Ω
Maximum Drain Source Voltage: 60 V
Maximum Gate Source Voltage: ±20 V
Maximum Operating Temperature: +150 °C
Maximum Power Dissipation: 2.8 W
Minimum Operating Temperature: -40 °C
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Package Type: DirectFET MN
Pin Count: 7
Typical Gate Charge @ Vgs: 36 nC V @ 10
Typical Input Capacitance @ Vds: 2120 pF V @ 25
Typical Turn-Off Delay Time: 28 ns
Typical Turn-On Delay Time: 16 ns