2SK1637 Silicon N-Channel MOS FET
Description
2SK1637 Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Absolute Maximum Ratings (Ta = 25°C)
| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 600 | V |
| Gate to source voltage | VGSS | ±30 | V |
| Drain current | ID | 4 | A |
| Drain peak current | ID(pulse) | 16 | A |
| Body to drain diode reverse drain current | IDR | 4 | A |
| Channel dissipation | Pch | 35 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature | Tstg | –55 to +150 | °C |
Items per pack:- 1
