IR IRFD9123 P-Channel MOSFET 0.8A 60V DIP4

Manufactured by International Rectifier - DIP4 Package

The IRFD9123 is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching traqnsistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.

FEATURES

• TYPICAL RDS(on) = 0.6Ω
• Single pulse avalanche energy rated
• SOA is power-dissipation limited
• Nonosecond switching speeds
• Linear transfer characteristics
• High input impedance