IR IRFD9123 P-Channel MOSFET 0.8A 60V DIP4
Description
IR IRFD9123 P-Channel MOSFET 0.8A 60V DIP4
Manufactured by International Rectifier - DIP4 Package
The IRFD9123 is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching traqnsistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits.
FEATURES
- TYPICAL RDS(on) = 0.6Ω
- Single pulse avalanche energy rated
- SOA is power-dissipation limited
- Nonosecond switching speeds
- Linear transfer characteristics
- High input impedance
VDSS | 60V |
VGS | 4V |
ID | 0.8A |
IDM | 6.4A |
PD | 1.0W |
RDS(ON) | 0.6Ω |
Items per pack:- 1