IR IRFIZ34NPBF N-Channel MOSFET 21A 55V 37W TO-220 Fullpak

Sales price £2.00
Price / COM_VIRTUEMART_UNIT_SYMBOL_:
Quantity in stock: 50

Description

IR IRFIZ34NPBF N-Channel MOSFET 21A 55V 37W TO-220 Fullpak

Manufactured by International Rectifier - TO-220 Fullpak Through hole package

RoHS Compliant

DESCRIPTION

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

 
 

SPECIFICATIONS

 
   
Channel Type N
Channel Mode Enhancement
Series HEXFET
Maximum Continuous Drain Current 21A
Maximum Drain Source Voltage 55V
Maximum Drain Source Resistance 0.04Ω
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Gate Source Voltage ±20V
Maximum Power Dissipation 37W
Typical Turn-On Delay Time 7nS
Typical Turn-Off Delay Time 31nS
Typical Gate Charge @ Vgs 34nC @ 44V
Typical Input Capacitance @ Vds 700pF @ 25V
Package Type TO-220 Fullpak
Operating Temperature -55°C to +175°C
   
   
Items per pack:- 1