IRG4PC40KDPbF IGBT N-Ch 600V 42A TO247AC

RS Components Part # 543-0254

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Features

• Short Circuit Rated UltraFast: Optimised for high operating frequencies >5.0kHz and short circuit rated to 10µS @ 125°C, V_GE = 15V
• Generation 4 IGBT design
• IGBT copackaged with HEXFRED™ ultrafast ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
• Industry Standar TO-247AC package
• Lead Free

V_CES - 600V
I_C@T_C=25°C - 42A
I_C@T_C=100°C - 25A
I_CM - 84A
I_LM - 84A
P_D@T_C=25°C - 160W
P_D@T_C=100°C - 65W

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Supplied in original sealed RS packet