IRF541 N Channel Power MOSFET Transistor
IRF541 N Channel Power MOSFET Transistor
Maufactured by ST SGS-Thompson
Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified
IRF541
Drain to Source Breakdown Voltage - VDS 80V
Drain to Gate Voltage (RGS = 20kΩ) - VDGR 80V
Continuous Drain Current - ID - 28A
TC = 100°C.- ID 20A
Pulsed Drain Current - IDM 110A
Gate to Source Voltage - VGS ±20V
Maximum Power Dissipation - PD 150W
Dissipation Derating Factor 1 W/°C
Single Pulse Avalanche Energy Rating - EAS 230 mJ
Operating and Storage Temperature - TJ, TSTG -55 to 175 °C