IRG4PC40KDPBF IGBT N-Ch 600V 42A TO247AC
Description
IRG4PC40KDPbF IGBT N-Ch 600V 42A TO247AC
RS Components Part # 543-0254
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
Features
- Short Circuit Rated UltraFast: Optimised for high operating frequencies >5.0kHz and short circuit rated to 10µS @ 125°C, VGE = 15V
- Generation 4 IGBT design
- IGBT copackaged with HEXFRED™ ultrafast ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
- Industry Standar TO-247AC package
- Lead Free
VCES - 600V
IC@TC=25°C - 42A
IC@TC=100°C - 25A
ICM - 84A
ILM - 84A
PD@TC=25°C - 160W
PD@TC=100°C - 65W
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Supplied in original sealed RS packet
Items per pack:- 1