IRLIB4343PBF N-Channel MOSFET 55V 19A TO-220 Full-Pak
IRLIB4343PBF N-Channel MOSFET 55V 19A TO-220 Full-Pak
RS Components Part # 650-4479
RS Catalogue Price: Discontinued Item
Manufactured by International Rectifier - Part # IRLIB4343PBF - TO-220 Full-Pak Package
DESCRIPTION
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
FEATURES
- Advanced Process Technology
- Key Parameters Optimized for Class-D Audio Amplifier Applications
- Low RDSON for Improved Efficiency
- Low Qg and Qsw for Better THD and Improved Efficiency
- Low Qrr for Better THD and Lower EMI
- 175°C Operating Junction Temperature for Ruggedness
- Repetitive Avalanche Capability for Robustness and Reliability