Fairchild FDP050AN06A0 N-Channel PowerTrench® MOSFET 60V 80A 5mΩ TO220IRF640 MOSFET Transistor (Pk of 2)
Fairchild FQA8N100C N-channel MOSFET 8A 100 V 3-Pin TO-3PN



Description
Fairchild FQA8N100C N-channel MOSFET 8A 100 V 3-Pin TO-3PN
Manufactured by Fairchild Semiconductor - Part # FQA8N100C
Supplied in sealed RS Components package - RS Components Part # 671-4972
Channel Type | N |
Maximum Continuous Drain Current | 8A |
Maximum Drain Source Voltage | 1000V |
Maximum Drain Source Resistance | 1.45Ω |
Minimum Gate Threshold Voltage | 3V |
Maximum Gate Source Voltage | ±30V |
Package Type | TO-3PN |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Channel Mode | Enhancement |
Category | Power MOSFET |
Maximum Power Dissipation | 225W |
Operating Temperature | -55°C to +150°C |
Series | QFET |
Number of Elements per Chip | 1 |
Typical Turn-Off Delay Time | 122ns |
Typical Input Capacitance @ Vds | 2475pF @ 25 V |
Typical Gate Charge @ Vgs | 53 nC @ 10 V |
Typical Turn-On Delay Time | 50 ns |
Transistor Material | Si |
Dimensions | 15.8 x 5 x 18.9mm |
Items per pack:- 1