IR IRFIZ34NPBF N-Channel MOSFET 21A 55V 37W TO-220 Fullpak
IR IRFIZ34NPBF N-Channel MOSFET 21A 55V 37W TO-220 Fullpak
Manufactured by International Rectifier - TO-220 Fullpak Through hole package
RoHS Compliant
DESCRIPTION
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
SPECIFICATIONS |
|
| Channel Type | N |
| Channel Mode | Enhancement |
| Series | HEXFET |
| Maximum Continuous Drain Current | 21A |
| Maximum Drain Source Voltage | 55V |
| Maximum Drain Source Resistance | 0.04Ω |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Power Dissipation | 37W |
| Typical Turn-On Delay Time | 7nS |
| Typical Turn-Off Delay Time | 31nS |
| Typical Gate Charge @ Vgs | 34nC @ 44V |
| Typical Input Capacitance @ Vds | 700pF @ 25V |
| Package Type | TO-220 Fullpak |
| Operating Temperature | -55°C to +175°C |