IRF541 N Channel Power MOSFET Transistor

Maufactured by ST SGS-Thompson

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified

IRF541
Drain to Source Breakdown Voltage - V_DS 80V
Drain to Gate Voltage (RGS = 20kΩ)  - V_DGR 80V
Continuous Drain Current - I_D - 28A
                  TC = 100°C.- I_D 20A

Pulsed Drain Current  - I_DM 110A
Gate to Source Voltage - V_GS ±20V
Maximum Power Dissipation - P_D 150W
Dissipation Derating Factor 1 W/°C
Single Pulse Avalanche Energy Rating - E_AS 230 mJ
Operating and Storage Temperature  - T_J, T_STG -55 to 175 °C